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NVMFD5877NL, NVMFD5877NLWF
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
53
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
3.5
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 7.5 A
31
39
m W
V GS = 4.5 V
I D = 7.5 A
42
60
Forward Transconductance
g FS
V DS = 15 V, I D = 5.0 A
7.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
540
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
55
36
Total Gate Charge
Q G(TOT)
5.9
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 48 V,
I D = 5.0 A
0.62
1.64
2.80
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 48V, I D = 5.0A
11
20
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
8.1
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 48 V,
I D = 5.0 A, R G = 2.5 W
15.8
11.8
3.9
Turn ? On Delay Time
t d(on)
4.9
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 48 V,
I D = 5.0 A, R G = 2.5 W
6.4
14.5
2.4
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 5.0 A
T J = 25 ° C
T J = 125 ° C
0.8
0.7
1.2
V
Reverse Recovery Time
t RR
14.5
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 5.0 A
11.5
3.1
Reverse Recovery Charge
Q RR
11
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.93
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.005
1.84
Gate Resistance
R G
1.5
W
5. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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